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2SJ386
Silicon P Channel MOS FET
REJ03G0861-0200 (Previous: ADE-208-1195) Rev.2.00 Sep 07, 2005
Description
High speed power switching
Features
* * * * * Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC-DC converter
Outline
RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod)
D
G
1. Source 2. Drain 3. Gate
32
1
S
Rev.2.00 Sep 07, 2005 page 1 of 5
2SJ386
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. PW 10 s, duty cycle 1% Symbol VDSS VGSS ID ID (pulse) IDR
Note 1
Value -30 20 -3 -5 -3 0.9 150 -55 to +150
Unit V V A A A W C C
Pch Tch Tstg
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Note: 2. Pulse test Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (off) RDS (on) RDS (on) |yfs| Ciss Coss Crss td (on) tr td (off) tf Min -30 20 -- -- -1.0 -- -- 1.0 -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.3 0.55 1.7 177 120 59 8 28 45 60 Max -- -- 10 -10 -2.5 0.4 0.8 -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns ns Test Conditions ID = -10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = -24 V, VGS = 0 ID = -1 mA, VDS = -10 V Note 2 ID = -2 A, VGS = -10 V ID = -2 A, VGS = -4 V Note 2 ID = -1 A, VDS = -10 V VDS = -10 V VGS = 0 f = 1 MHz ID = -2 A VGS = -10 V RL = 15
Note 2
Rev.2.00 Sep 07, 2005 page 2 of 5
2SJ386
Main Characteristics
Power vs. Temperature Derating
1.6 -10 -3 -1 -0.3 -0.1 -0.03
Maximum Safe Operation Area
100 s
Pch (W)
ID (A)
PW
1
= 10
m s
1.2
m s
Channel Dissipation
0.8
Drain Current
0.4
O pe ra tio n Operation in this area is limited by RDS (on)
Ta = 25C 1 shot pulse -1 -3 -10 -30 -100
DC
0
0
50
100
150
200
-0.01 -0.1 -0.3
Ambient Temperature
Ta (C)
Drain to Source Voltage
VDS (V)
Typical Output Characteristics
-2.0 -5 V -4 V -3.5 V -3 V -5 Ta = 25C Pulse Test
Typical Transfer Characteristics
VDS = -10 V Pulse Test
ID (A)
-1.6
ID (A)
-4 Tc = -25C -3 25C 75C -2
-1.2
Drain Current
-2.5 V -0.8
Drain Current
-10
-0.4
VGS = -2 V 0 -2 -4 -6 -8
-1
0
0
0
-1
-2
-3
-4
-5
Drain to Source Voltage
VDS (V)
Gate to Source Voltage
VGS (V)
Drain to Source Saturation Voltage VDS (on) (V)
Drain to Source Saturation Voltage vs. Gate to Source Voltage
Ta = 25C Pulse Test -4
Static Drain to Source on State Resistance vs. Drain Current
Drain to Source on State Resistance RDS (on) ()
-5
10 Pulse Test 5
-3
2 1 0.5 VGS = -4 V
-2 ID = -5 A -1 -3 A -1 A 0 0 -4 -8 -12 -16 -20
0.2 0.1 -0.1 -0.2
-10 V
-0.5
-1
-2
-5
-10
Gate to Source Voltage
VGS (V)
Drain Current
ID (A)
Rev.2.00 Sep 07, 2005 page 3 of 5
2SJ386
Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance RDS (on) ()
1.0 Pulse Test 0.8 VGS = -4 V 0.6 ID = -5 A 0.4 -3 A 0.2 -10 V -1 A -1 A ID = -3 A
10 5
VDS = -10 V Pulse Test Tc = -25C
2 1 0.5 0.2 0.1 -0.1 -0.2 25C 75C
0 -40
0
40
80
120
160
-0.5
-1
-2
-5
-10
Ambient Temperature
Ta (C)
Drain Current ID (A)
Typical Capacitance vs. Drain to Source Voltage
Dynamic Input Characteristics
VDS (V)
ID = -3 A VDD = -10 V -20 V -30 V VDS
500
Capacitance C (pF)
-10
-4
Ciss Coss Crss
-20
-8
100 50
-30 VGS -40 VDD = -30 V -20 V -10 V
-12
-16
20 10
VGS = 0 f = 1 MHz 0 -10 -20 -30 -40 -50
-50 0 4 8 12 16
-20 20
Drain to Source Voltage VDS (V)
Gate Charge
Qg (nc)
Switching Characteristics
200 100 50 tf -5
Reverse Drain Current vs. Source to Drain Voltage
Reverse Drain Current IDR (A)
Pulse Test
Switching Time t (ns)
-4 -10 V -3 -5 V -2
VGS = 0
td(off)
20 10 5
tr td(on)
-1
VGS = -10 V, VDD = -30 V PW = 2 s, duty 1 % 2 -0.05 -0.1 -0.2 -0.5 -1 -2 -5
0 0 -0.4 -0.8 -1.2 -1.6 -2.0
Drain Current
ID (A)
Source to Drain Voltage
VSD
(V)
Rev.2.00 Sep 07, 2005 page 4 of 5
Gate to Source Voltage
200
Drain to Source Voltage
VGS (V)
1000
0
0
2SJ386
Package Dimensions
JEITA Package Code
SC-51
RENESAS Code
PRSS0003DC-A
Package Name TO-92 Mod / TO-92 ModV
MASS[Typ.] 0.35g
Unit: mm
4.8 0.4
3.8 0.4
0.65 0.1 0.75 Max 0.55 Max 0.60 Max
2.3 Max 0.7
10.1 Min
8.0 0.5
0.5 Max
1.27 2.54
Ordering Information
Part Name Quantity Shipping Container 2SJ386TZ-E 2500 pcs Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.2.00 Sep 07, 2005 page 5 of 5
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
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1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
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Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> 2-796-3115, Fax: <82> 2-796-2145
http://www.renesas.com
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(c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
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